METHOD OF FORMING AN OHMIC CONTACT TO A III-V SEMICONDUCTOR MATERIAL

摘要

An ohmic contact to a III-V semiconductor material (10) is fabricated by dry etching a silicon nitride layer (12) overlying the III-V semiconductor material (10) with a chemical comprised of a group VI element. An ohmic metal layer (17) is formed on the III-V semiconductor material (10) after the silicon nitride layer (12) is etched and before any exposure of the III-V semiconductor material (10) to a chemical which etches the III-V semiconductor material (10) or removes the group VI element.