发明名称 |
THIN FILM OF ABO3 WITH EXCESS A-SITE AND B-SITE MODIFIERS AND METHOD OF FABRICATING INTEGRATED CIRCUITS WITH SAME |
摘要 |
A method for fabricating an integrated circuit capacitor (10, 20, 30) having a dielectric layer (15, 26, 37) comprising BST with excess A-site and B-site materials such as barium and titanium added. An organometallic or metallic soap precursor solution is prepared (P42) comprising a stock solution of BST of greater than 99.999 % purity blended with excess A-site and B-site materials such as barium and titanium such that the barium is in the range of 0.01-100 mol %, and such that the titanium is in the range of 0.01-100 mol %. A xylene exchange (P44) is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor solution is spun on a first electrode (P45), dried (P46) at 400 DEG C for 2 to 10 minutes, then annealed (P47) at 650 DEG C to 800 DEG C for about an hour to form a layer of BST with excess titanium. A second electrode is deposited (P48), patterned (P49), and annealed at between 650 DEG C to 800 DEG C for about 30 minutes. The resultant capacitor (10, 20, 30) exhibits an enlarged dielectric constant with little change in leakage current.
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申请公布号 |
WO9601493(A1) |
申请公布日期 |
1996.01.18 |
申请号 |
WO1995US08296 |
申请日期 |
1995.06.30 |
申请人 |
SYMETRIX CORPORATION;MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
AZUMA, MASAMICHI;PAZ DE ARAUJO, CARLOS, A.;SCOTT, MICHAEL, C. |
分类号 |
C23C18/12;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L27/108;H01L27/115;(IPC1-7):H01L21/320 |
主分类号 |
C23C18/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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