| 摘要 |
A device and method for providing a device suitable for microwave and/or RF applications comprising an HTS film (4) having low surface resistance and exhibiting linear response characteristics at high RF current density is provided. Broadly, a two-step process of first, in situ forming an intermediate layer of YBCO (2) (or a structural analog) used as a nucleation layer on a support layer (1), and second forming a thallium and copper oxide based film (4) on the intermediate layer (2) by precursor (3) deposition followed by a post-deposition thermal processing for crystallization.
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