| 摘要 |
PURPOSE:To form a metal silicide film with a flat surface within a contact hole, by uniformly forming the metal silicide film over the surface of a substrate having a contact hole, applying energy beams to the metal silicide located in the contact hole and then uniformly etching the metal silicide. CONSTITUTION:A contact hole 13 is provided at a predetermined position in an insulation film 12 on the surface of a substrate 11. A film of metal silicide 14 is uniformly formed over the whole surface including the contact hole. Any of light, energy beams, electron beams or ion beams 16 are applied to the tungsten silicide contained in the contact hole 13 as indicated by the arrows, so that the tungsten silicide in that region is crystallized. When wet or dry etching is performed after this crystallization, the crystallized metal silicide, which is hardly etched, is left as it is while the other unrequired portion of the metal silicide is removed by the etching. Consequently, a wiring layer having an extremely flat surface can be provided in the contact hole. |
