发明名称
摘要 PURPOSE:To permit expansion in memory capacity by using a high-polymer matrix specified in permanent electric dipole moment density on a molecular chain as a matrix. CONSTITUTION:This material is so formed as to make memorization by utilizing photochemical or photophysical hole burning. The high-polymer matrix having the permanent electric dipole moment density on the molecular chain smaller than 0.6Debye/carbon atom., more preferably 0.4Debye/carbon atom. is used. Such high-polymer matrix having <=0.6Debye/carbon atom. permanent electric dipole moment density on the molecular chain is exemplified by high-polymer materials consisting of carbon atom. and hydrogen atom. such as polyethylene (PE), PP, and polybutadiene, and high-polymer materials consisting of hydrogen and oxygen atoms such as polymethacrylic acid and alkyl ester of polymethacrylic acid. The entire level of the half amplitude level of the hole spectra is thereby controlled and the expansion in memory capacity is permitted in the case of using this material as an optical multiplex recording material.
申请公布号 JPH083607(B2) 申请公布日期 1996.01.17
申请号 JP19870043494 申请日期 1987.02.25
申请人 发明人
分类号 G03C1/72;G11B7/245;(IPC1-7):G03C1/72 主分类号 G03C1/72
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