Method of manufacturing semiconductor device

摘要

In a method of manufacturing a semiconductor device, when contact holes are to be formed in an insulating film (110) formed on a monocrystalline or polycrystalline semiconductor layer (108), the contact holes can be formed using a polycrystalline semiconductor layer formed on the insulating film as a mask. Therefore, the lithographic step of forming the contact holes in the insulating film formed on the monocrystalline or polycrystalline semiconductor layer can be eliminated.