发明名称 Method and apparatus for etching film layers on large substrates
摘要 <p>A chamber (10) for processing substrates (12) includes a support member (14) therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces (30) for receiving substrates thereon, and is rotatable by a drive member (16) through a coupling (34) about a horizontal axis to position the multiple planar faces in a horizontal position (Fig 2) to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position (Fig 3) for processing. A clamping and lifting apparatus (32) is provided on the support member. The clamping and lifting apparatus is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting assembly and the support member, and in a retracted position to clamp the substrate to the support member. A clamp actuator (200) is disposed on the chamber wall to move the clamping and lifting assembly (32) between the extended and retracted positions. <MATH> <MATH></p>
申请公布号 EP0692815(A2) 申请公布日期 1996.01.17
申请号 EP19950304790 申请日期 1995.07.10
申请人 APPLIED MATERIALS, INC. 发明人 WONG, JERRY;TOSHIMA, MASATOM M;LAW, KAM S.;MAYDN, DAN;TURNER,NORMAN L.
分类号 H01L21/302;H01L21/3065;H01L21/67;H01L21/683;H01L21/687;(IPC1-7):H01L21/00 主分类号 H01L21/302
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