发明名称 |
Method and apparatus for etching film layers on large substrates |
摘要 |
<p>A chamber (10) for processing substrates (12) includes a support member (14) therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces (30) for receiving substrates thereon, and is rotatable by a drive member (16) through a coupling (34) about a horizontal axis to position the multiple planar faces in a horizontal position (Fig 2) to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position (Fig 3) for processing. A clamping and lifting apparatus (32) is provided on the support member. The clamping and lifting apparatus is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting assembly and the support member, and in a retracted position to clamp the substrate to the support member. A clamp actuator (200) is disposed on the chamber wall to move the clamping and lifting assembly (32) between the extended and retracted positions. <MATH> <MATH></p> |
申请公布号 |
EP0692815(A2) |
申请公布日期 |
1996.01.17 |
申请号 |
EP19950304790 |
申请日期 |
1995.07.10 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WONG, JERRY;TOSHIMA, MASATOM M;LAW, KAM S.;MAYDN, DAN;TURNER,NORMAN L. |
分类号 |
H01L21/302;H01L21/3065;H01L21/67;H01L21/683;H01L21/687;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|