| 摘要 |
PURPOSE:To follow a local change in film thickness of a material to be polished, to polish only a gap upper part, and to facilitate formation of such a structure in polishing for flattening of a semiconductor wafer and the like. CONSTITUTION:An abrasive cloth, which is used for flattening a material 31 to be flattened such as a semiconductor base plate wafer having a gap, is provided with parts (a soft part 17, a hard part 18) having different surface hardness on the abrasive face, and the partially different hardness parts are formed by phase separation of a resin constituting the surface part. |
