发明名称 |
Depleted extrinsic emitter of collector-up heterojunction bipolar transistor |
摘要 |
A collector-up bipolar transistor having an undercut region (522) beneath extrinsic regions of a base layer (510) and an emitter layer (508). The extrinsic emitter region is depleted of charge carriers and provides passivation for the extrinsic portion of the base layer (508). Contact to the emitter layer may be made by forming contacts on the top surface of the substrate (500) or in a recess in the backside of the substrate.
|
申请公布号 |
US5485025(A) |
申请公布日期 |
1996.01.16 |
申请号 |
US19940349343 |
申请日期 |
1994.12.02 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHAU, HIN F.;TSERNG, HUA Q. |
分类号 |
H01L29/737;(IPC1-7):H01L29/06;H01L29/161;H01L29/205;H01L23/02 |
主分类号 |
H01L29/737 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|