| 发明名称 |
Method of forming cubic boron nitride films |
| 摘要 |
A novel method of forming large area single crystal cubic boron nitride films on a silicon substrate by first treating the surface of the substrate with atomic hydrogen and then depositing a cubic boron nitride film by a reactive biased laser ablation technique.
|
| 申请公布号 |
US5483920(A) |
申请公布日期 |
1996.01.16 |
| 申请号 |
US19930102605 |
申请日期 |
1993.08.05 |
| 申请人 |
BOARD OF GOVERNORS OF WAYNE STATE UNIVERSITY |
发明人 |
PRYOR, ROGER W. |
| 分类号 |
C23C14/02;C23C14/06;C30B23/02;(IPC1-7):C30B23/08 |
主分类号 |
C23C14/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
