Control device for double gate semiconductor device.,申请号EP19940116913-传众专利搜索

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发明名称	Control device for double gate semiconductor device.
摘要
申请公布号	EP0651507(A3)	申请公布日期	1996.01.17
申请号	EP19940116913	申请日期	1994.10.26
申请人	FUJI ELECTRIC CO., LTD.	发明人	TERASAWA, NORIHO
分类号	H03K17/08;H02M1/08;H03K17/0812;H03K17/082;H03K17/56;H03K17/567;(IPC1-7):H03K17/567	主分类号	H03K17/08
代理机构		代理人
主权项
地址

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