| 摘要 |
PURPOSE:To prevent metal component in a gate electrode from diffusing from the gate electrode containing metal material component to the inside of a gate insulating film, by constituting the gate insulating film mainly of silicon, oxygen and nitrogen, and changing the composition ratio of N in the direction of film thickness. CONSTITUTION:A silicon film 103 turning to active layers are patterned, active layers 105, 106 are formed, and an SiOxNy film 107 turning to a gate insulating film is formed so as to cover the active layers 105, 106. The composition ratio of N is made maximum on the interface of the gate insulating film 107 expressed by SiOxNy and the active layer 106. Thereby a barrier layer can be formed on the interface. By the effect of the barrier layer, hydrogen ions and metal ions which have diffused from the active layers 105, 106 can be prevented from penetrating into the gate insulating film 107. |
