| 摘要 |
PURPOSE:To obtain a semiconductor device whose manufacturing process is simple and safe where the insulation layer of a photosensitive resin composition with a high sensitivity and improved resolution in that a relief pattern can be formed by applying light or radioactive rays is provided by providing the insulation layer which is formed by a specific photosensitive resin composition on the surface of a semiconductor element. CONSTITUTION:An insulation layer 6 formed by a photosensitive resin composition with a solution of polyamic acid indicated by a shown general formula (A), a compound with activated aromatic ring and tertiary amino group (B), a photodecomposable proton generation agent (C), and a polyfunctional latent electrophilic agent (D) as necessary constituents is provided on the surface of a semiconductor element 1 directly or via another insulation layer 5, where R<1>, R<2>, and n in the formula indicate a quadrivalent organic acid residue, a divalent diamine residue, and one or larger integer, respectively. For example, a compound as the constituent (B) is m-hydroxybenzoic acid 2- dimethylaminoethyl ester. |
