| 摘要 |
PURPOSE:To provide a light emitting/receiving device provided with p-type electrode structure in which ohmic contact with a p-type II-VI compound semiconductor crystals is realized. CONSTITUTION:The light emitting/receiving device is provided with a p-type electrode structure comprising a first p-type II-VI group compound semiconductor crystal layer 20 including Se, an HgSe layer 21, a second II-VI compound semiconductor crystal layer 22 and a metallic layer 23 successively formed. In such a constitution, it is preferable that the first p-type II-VI group compound semiconductor crystal layer 20 is composed of (Zn, Mg, Cd) Se while the second p-type II-VI semiconductor crystal layer 22 is composed of ZnTe. |
