| 摘要 |
PURPOSE:To provide a method for manufacturing semiconductor elements that makes it possible to manufacture semiconductor devices having a low resistance in the metal-semiconductor boundary and favorable characteristics, with high productivity. CONSTITUTION:A metal thin film 2 of Ti, Mo, W or the like, containing 10 mol% or less of impurities, such as P and B, to be dopant, is previously formed on a semiconductor substrate 1 composed of polycrystalline silicon in a vacuum chamber by vacuum evaporation, sputtering or the like. The workpiece is heated to 800 deg.C in an Ar atmosphere to diffuse the dopant element in the semiconductor substrate 1. This forms a doping layer 3 and further a metal silicide layer 4. |
