| 摘要 |
PURPOSE:To perform a series of steps for determining the area of outer base region and the distance between the outer base region and the emitter region of a bipolar transistor while self-aligning without causing any trouble in a BiCMOS and the fabrication thereof. CONSTITUTION:Under a state where an nMOS region and a pMOS region are coated with a first silicon 9 and a silicon nitride 10, a series of steps are performed in order to form a self-aligned P<+> type outer base region of a bipolar transistor. The first silicon film is then patterned to form the base electrode of the bipolar transistor and the gate electrodes of nMOS and pMOS transistors.
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