MICROWAVE SEMICONDUCTOR PACKAGE

摘要

PURPOSE:To miniaturize the device in spite of adding a feedback circuit by forming metalized patterns from input and output parts on the lower face of a sealing-up cap and adding the feedback circuit in a package so as to realize the capacitive coupling. CONSTITUTION:The signal inputted to a gate electrode lead 3 rises along a metalized part 16 of the side face of a base seat 1 and reaches a gate electrode 18 of an FET from a metalized part 17 of the upper face of the base seat 1. The amplified signal outputted from a drain electrode 19 of the FET falls along a metalized part 21 of the side face of the pedestal from a metalized part 20 of the upper face of the base seat 1 and is outputted from a drain electrode lead 4. The metalized part 17 of the upper face of the base seat 1 on the input side is connected to an inside metalization pattern 23 of an annular dielectric, and capacitive coupling is brought above between this pattern 23 and a metalization pattern 24 on the lower face of the cap branched from the output side in the same manner. Metalization patterns 23 and 24 for soldering don't come into contact with each other. Thus, the feedback circuit can be incorporated in the package.