发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To provide an IGBT module of high reliability by suppressing development of cracking of the wire on an electrode pad while running. CONSTITUTION:An IGBT module contains an average crystal grain size of more than 50mum in connection between an element 3 and an external electrode 1, and, so that no recrystallization take place at conduction, it consists of an aluminum wire containing Fe of 0.02-1wt.% so that recrystallization temperature is raised to 150 deg.C or above. Thus, an IGBT module of high reliability with no possible wire peel.
申请公布号 JPH088288(A) 申请公布日期 1996.01.12
申请号 JP19940136866 申请日期 1994.06.20
申请人 HITACHI LTD 发明人 KOIZUMI MASAHIRO;ONUKI HITOSHI
分类号 H01L21/60;H01L29/78 主分类号 H01L21/60
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