发明名称 |
SUBSTRATE TREATING SYSTEM |
摘要 |
PURPOSE:To prevent transmission of heat from a heat treating section to a non-heat treating section at the time of circulation transfer of a substrate to be treated. CONSTITUTION:Semiconductor wafers are circulated through a first treating section group 110 including a hot plate and a second treating section group 120 including no hot plate and treated sequentially at each treating section. A high temperature robot TH for gaining access to the first treating section group 110 is provided independently from a low temperature robot TC for gaining access to the second treating section group. The semiconductor water IS delivered between two robots TH, TC through a delivering section 140 utilizing a cool plate. Since the low temperature robot TC is not subjected to heat, the temperature stability is sustained at the non-heat treating part even if the low temperature robot gains access to a non-heat treating section in the second treating section group 120.
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申请公布号 |
JPH088321(A) |
申请公布日期 |
1996.01.12 |
申请号 |
JP19940135796 |
申请日期 |
1994.06.17 |
申请人 |
DAINIPPON SCREEN MFG CO LTD |
发明人 |
SASADA SHIGERU;AOKI KAORU;KODAMA MITSUMASA;SUGIMOTO KENJI;FUKUTOMI YOSHIMITSU;INOUE HIDEKAZU |
分类号 |
B23P19/00;H01L21/00;H01L21/677;(IPC1-7):H01L21/68 |
主分类号 |
B23P19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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