发明名称 SUBSTRATE TREATING SYSTEM
摘要 PURPOSE:To prevent transmission of heat from a heat treating section to a non-heat treating section at the time of circulation transfer of a substrate to be treated. CONSTITUTION:Semiconductor wafers are circulated through a first treating section group 110 including a hot plate and a second treating section group 120 including no hot plate and treated sequentially at each treating section. A high temperature robot TH for gaining access to the first treating section group 110 is provided independently from a low temperature robot TC for gaining access to the second treating section group. The semiconductor water IS delivered between two robots TH, TC through a delivering section 140 utilizing a cool plate. Since the low temperature robot TC is not subjected to heat, the temperature stability is sustained at the non-heat treating part even if the low temperature robot gains access to a non-heat treating section in the second treating section group 120.
申请公布号 JPH088321(A) 申请公布日期 1996.01.12
申请号 JP19940135796 申请日期 1994.06.17
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 SASADA SHIGERU;AOKI KAORU;KODAMA MITSUMASA;SUGIMOTO KENJI;FUKUTOMI YOSHIMITSU;INOUE HIDEKAZU
分类号 B23P19/00;H01L21/00;H01L21/677;(IPC1-7):H01L21/68 主分类号 B23P19/00
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