| 摘要 |
PURPOSE:To control an influence of defective part on a substrate surface to realize epitaxial growth of a high quality p-type layer and n-type layer on a GaAs substrate crystal. CONSTITUTION:On the occasion of sequential liquid phase epitaxial growth of p-type Ga1-xAlxAs layer and n-type Ga1-xA fx. As layer on a GaAs substrate crystal, the Ga solution for growth of p-type Ga1-xAlxAs layer is maintained at the temperature which is higher than that for saturably solving Al and As by 1 to 10 deg.. After the GaAs substrate crystal is placed in contact with the Ga solution, the Ga solution is gradually cooled so that the p-type Ga1-xAlxAs layer grows at the surface of the GaAs substrate crystal. Thereby, since a high quality p-type layer is formed without reflecting a fault at the substrate surface, a light emitting diode which provide a higher light emitting output can be obtained. |
