| 摘要 |
<p>PURPOSE:To prevent the fluctuation of characteristics of a memory cell caused by disturbance at the time of write-in and erasing in a non-volatile memory in which a memory cell is divided into plural blocks. CONSTITUTION:A memory array of a non-volatile memory is divided into plural blocks B [0,0], [1,0], [0,1], [1,1]... in the direction of a word line (W) and a data line (D). Selection of blocks B is performed by a block selecting line DB and a block selecting line WB, a word line potential, a data line potential and a source potential are supplied only to a memory cell of a selected block B, and these potentials are not supplied to non-selection blocks B.</p> |
