| 摘要 |
<p>PURPOSE:To make it possible to eliminate soft errors due to a rays in a flip chip semiconductor device. CONSTITUTION:A first insulating layer 6, a wiring layer 7 and a second insulating layer 8 are formed on a semiconductor substrate 1 on which a plurality of transistors 14 are formed in a matrix pattern. Vias are formed in the first and second insulating layers 6, 8, and the transistors 14 are connected with solder bumps 11 formed on the second insulating layer 8 to form a semiconductor device. The vias are formed in such a pattern that the first vias formed in the first insulating layer 6, directly above each of the transistors 14 and the second vias 9 formed in the second insulating layer 8, directly under the solder bumps 11 are staggered.</p> |
