| 摘要 |
PURPOSE:To maintain flatness on the surface by forming an insulating layer, comprising a main insulating layer and a thinner surface insulating layer, on a semiconductor substrate and composing the surface insulating layer of borosilicate glass having concentration of boron lower than the concentration of boron plus phosphorus dopant of the main insulating layer thereby preventing the boron recrystallization grain from growing through moisture absorption with time. CONSTITUTION:Oxygen gas, containing an organic silicon compound and ozone, boron dopant gas, and phosphorus dopant gas are fed onto a semiconductor substrate 1 and a main insulating layer 2 of phosphorus borosilicate glass, having a specified concentration of boron plus phosphorus dopant suitable for reflow, is grown by an atmospheric or low pressure CVD. An insulating layer 4 with a laminate of a thin surface insulating layer 3 of borosilicate glass, having boron concentration lower than the dopant concentration of boron plus phosphorus of the main insulating layer 2, is then formed on the surface of the main insulating layer 2. This method can prevent the recrystallization grain of boron or phosphor from growing through moisture absorption with time th maintaining the flatness on the surface. |
