Verfahren zur Herstellung von Dünnschicht-Elektrolumineszenz-Elementen

摘要

To improve the manufacture of luminous layers in order to obtain thin-film electroluminescent elements with high luminous brightness, a zinc sulphide ZnS thin film is formed by adding a dopant as an emission centre eg. Mn, argon gas containing hydrogen sulphide is introduced from a gas inlet (13), and a target (8) consisting of zinc and a dopant is sputtered using the argon gas. The temperature of the glass substrate (1) is maintained within the range of 380 to 480 DEG C to cause the vapours of sputtered zinc and dopant, and hydrogen sulphide gas to react with each other, thereby forming a luminous layer on the glass substrate (1). In another arrangement, the zinc target is dotted with terbium fluoride and the luminous layer is subsequently heat-treated at 600 DEG C. Alternatively, other rare earth elements may be used and the sputter gas may by sulphur vapour and argon. <IMAGE>