发明名称 STRUCTURE AND FABRICATION OF ELECTRON-EMITTING DEVICES
摘要 In one electron-emitting device, non-insulating particle bonding material (24) securely bonds electron-emissive carbon-containing particles (22) to an underlying non-insulating region (12). The carbon in each carbon-containing particle is in the form of diamond, graphite, amorphous carbon, or/and silicon carbide. In another electron-emitting device, electron-emissive pillars (22/28) overlie a non-insulating region (12). Each pillar is formed with an electron-emissive particle (22) and an underlying non-conductive pedestal (28). Various techniques, including use of electron-emissive particles as etch masks in the case of the pillared electron emitter, are employed in fabricating the electron emitters.
申请公布号 WO9600974(A1) 申请公布日期 1996.01.11
申请号 WO1994US09650 申请日期 1994.09.08
申请人 SILICON VIDEO CORPORATION;MASSACHUSETTS INSTITUTE OF TECHNOLOGY;ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 TWICHELL, JONATHAN, C.;BRANDES, GEORGE, R.;GEIS, MICHAEL, W.;MACAULAY, JOHN, M.;DUBOC, ROBERT, M., JR.;CURTIN, CHRISTOPHER, J.
分类号 H01J1/304;H01J9/02;(IPC1-7):H01J9/02;H01J1/30 主分类号 H01J1/304
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