发明名称 |
ISOLATING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
storing a pad oxide film and buffer layer on a semiconductor substrate; forming the first oxide prevention layer having pressure deformation on the buffer layer; forming a tensile deformation on the first oxide prevention layer; exposing the buffer layer of the device separation region by eliminating the first and the second oxide prevention layer; forming the device separation film by oxidating the semiconductor substrate of the exposed region.
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申请公布号 |
KR960000700(B1) |
申请公布日期 |
1996.01.11 |
申请号 |
KR19920014254 |
申请日期 |
1992.08.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, YUN - KI |
分类号 |
H01L21/76;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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