发明名称 |
MANUFACTURING METHOD OF ISOLATION REGION OF BIPOLAR TRANSISTOR |
摘要 |
forming a trench by etching the epitaxial layer at a predetermined width on the both sides of the buried layer; growing an oxide film by chemical vapor deposition(CVD) in the trench; forming P+ device separation region by implanting a boron ion on the oxide film.
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申请公布号 |
KR960000701(B1) |
申请公布日期 |
1996.01.11 |
申请号 |
KR19920014259 |
申请日期 |
1992.08.08 |
申请人 |
LG SEMICONDUCTOR CO., LTD. |
发明人 |
KWON, SOO - SIK |
分类号 |
H01L21/76;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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