Resist pattern prodn. esp. for integrated circuits

摘要

The prodn. of a resist pattern comprises: (a) coating a semiconductor substrate (1) with a layer of lacquer (2) of a type which is developed with an alkaline developer and which undergoes a chemical change when exposed to light, (b) forming an acid layer (3) on lacquer (2) from an acidic, water-soluble material (I), to give a transmission factor of at least 70% before and during exposure to light when the layer thickness is 1 micron, and (c) directing light (5) selectively onto layer (2) so as to form an image which is then developed with an alkaline developer to form the resist pattern (7). In a variation of this process, acid layer (3) is removed before exposure to light in stage (c). Also claimed is a water-soluble, acidic mixt. (I) contg. (A) water and a resin with an acidic gp., e.g. COOH or SO3H, or (B) water, a water-soluble resin and a low-mol.wt., acidic organic cpd. such as a carboxylic or sulphonic acid.