发明名称 |
Metal crossover in high voltage IC with graduated doping control. |
摘要 |
Non-uniformly doped regions are formed adjacent to semiconductor junctions which underlie high voltage crossovers. The non-uniformly doped regions prevent junction breakdown caused by strong electric fields. The voltage drop between a crossover and an element of an integrated circuit is spread over the non-uniformly doped region, to lessen the voltage drop between the crossover and the junction and lessen the electric field at the junction. Dopant concentrations in the non-uniformly doped region may be selected to minimize use of silicon real estate. In some embodiments, a graded dopant concentration is lightest near the junction and increases toward a circuit element being protected. <IMAGE> |
申请公布号 |
EP0637846(A3) |
申请公布日期 |
1996.01.10 |
申请号 |
EP19940202094 |
申请日期 |
1994.07.18 |
申请人 |
SILICONIX INCORPORATED |
发明人 |
CHANG, MIKE F.;OWYANG, KING;WILLIAMS, RICHARD K. |
分类号 |
H01L21/768;H01L21/22;H01L21/266;H01L23/522;H01L29/06;H01L29/78 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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