| 发明名称 |
Method for forming most capacitor using poly spacer technique |
| 摘要 |
A MOST capacitor for use in a DRAM cell is formed by depositing a conductive polysilicon electrode layer on the substrate. Oxide lines are then formed on the polysilicon layer. Using the oxide lines as a mask, pillars are etched in the polysilicon electrode layer.
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| 申请公布号 |
US5482885(A) |
申请公布日期 |
1996.01.09 |
| 申请号 |
US19940214595 |
申请日期 |
1994.03.18 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LUR, WATER;HUANG, CHENG-HEN |
| 分类号 |
H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L21/02 |
| 代理机构 |
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