| 摘要 |
A diamond covered member is provided which has a diamond crystal layer formed by vapor phase synthesis on a surface of a substrate, the diamond crystal layer being constituted of plate-shaped diamond crystals at least at an initial stage of crystal growth, and being a polycrystal film formed by growth and coalescence of the plate-shaped diamond crystals, and the polycrystal film being uniformly oriented and having surface roughness (Rmax) of not larger than 0.2 mu m. A process for producing the diamond covered member is also provided. The diamond covered member has high hardness, high thermal conductivity, and high chemical stability.
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