发明名称 |
STEP FORMING OF SEMICONDUCTOR SUBSTRATUM SURFACE |
摘要 |
selectively forming the first insulating layer on a cell circuit region of a semiconductor substrate; selectively forming the first conducting type epitaxial layer on a substrate of exposed peripheral circuit region; eliminating an oxide layer by forming the oxide layer through heat oxidating the first epitaxial layer and the substrate surface after eliminating the first insulating layer.
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申请公布号 |
KR960000373(B1) |
申请公布日期 |
1996.01.05 |
申请号 |
KR19920017254 |
申请日期 |
1992.09.22 |
申请人 |
LG SEMICONDUCTOR CO., LTD. |
发明人 |
SEO, DONG - RYANG |
分类号 |
H01L21/30;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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