| 摘要 |
a gate electrode formed on a substrate; a nitride film of the second nitride film involving more nitrogen than nitrogen component of the first nitride film, the first nitride film of the gate insulating film formed on the gate electrode; n+ amorphous silicon layer for the Ohmic characteristic between drain and source and amorphous silicon layer which is an active layer formed on the TFT part of the nitride film; drain and source electrode of drain and source electrode formed on nitride film and amorphous silicon layer.
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