CONTACT HOLE PATTERNING METHOD OF SEMICONDUCTOR DEVICE

摘要

forming the first insulating film on top of a semiconductor memory device; patterning a photoresist as a predetermined contact part pattern after passivating the photoresist on the first insulating film; sinking the oxide film due to a low temperature plasma method on the photoresist patterned; forming the first contact part by different directional etching the first insulating film and the oxide film continuously due to the low temperature plasma method; eliminating the photoresist; forming the second contact part simultaneously as forming a spacer by different directional etching the second insulating film after sinking the second insulating film at front side of the first contact part.