METAL PLANERIZING METHOD OF SEMICONDUCTOR DEVICE

摘要

forming a seed layer by executing the first sputtering process and by locating a wafer with a constant interval above the heater for lowering the temperature of the wafer less than that of the heater in the reaction chamber having the heater; forming flattening layer on the wafer by executing sputtering process and by locating the wafer on the heater for maintaining the temperature of the wafer and heater.