INTERLAYER INSULATING FILM STRUCTURE AND FORMING METHOD THEREOF

摘要

The structure includes an impurity layer formed at the main surface of a semiconductor substrate; the first insulating layer between layers formed on the semiconductor substrate; a contacting part exposed on the impurity layer formed at the first insulating layer between layers; a conducting layer formed in the contacting part and on top of the first insulating layer; a spacer formed at the wall of conducting layer in the contacting; the second insulating layer between layers formed on the first insulating layer between layers, conducting layer and spacer.