Prodn. of capacitor on semiconductor element

摘要

Prodn. of a capacitor on a semiconductor element comprises: (a) forming a contact hole in a stack consisting of 1st insulating layer (1) and 2nd insulating layer (2) arranged one after the other on a substrate; (b) depositing a 1st polysilicon layer (3) to fill the hole, and forming a 1st photosensitive layer pattern (30) for a storage electrode mask on the layer (3); (c) back-etching the material of the 1st polysilicon layer (3) to a suitable depth to form a projection; (d) removing the pattern (30) and depositing a 3rd insulating layer (4), 4th insulating (5) and 5th insulating layer (6); (e) forming a 2nd photosensitive layer pattern (40) for a storage electrode mask on the 5th layer (6) wider than the 1st pattern (30); (f) dry etching the insulating layers (6,5,4) and 1st polysilicon layer (3) to form a 3rd insulating layer pattern (4'), 4th pattern (5'), 5th pattern (6') and 1st polysilicon layer pattern (3'); (g) removing the 2nd photosensitive layer pattern (40) and hollowing out the 4th pattern (5') to form a hollow space (5) between the patterns (4',6'); (h) depositing a 2nd polysilicon layer (7) of the structure obtd. to fill space (5), and back-etching the 2nd polysilicon layer (7) to form on side wall of 3rd and 5th patterns (4',6') an intermediate piece (7'); (i) removing the material of patterns (6',5',4') on pattern (2) by wet etching to expose a storage electrode (20); and (j) applying a dielectric layer (8) on the surface of the electrode (20) and forming a plate electrode (9) on the surfaces.