The method involves using a semiconductor wafer (1a) and a substrate (3a). Provided on the wafer is a non-stoichiometric layer (2) of insulation material. The two surfaces are bonded together using a high temperature. An e.g. buried insulation layer (3b) is provided on the substrate if the substrate is not itself initially easily bonded.
申请公布号
DE4423067(A1)
申请公布日期
1996.01.04
申请号
DE19944423067
申请日期
1994.07.01
申请人
DAIMLER-BENZ AKTIENGESELLSCHAFT, 70567 STUTTGART, DE