Method and apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor

摘要

To deposit a film on a substrate (22) by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures, a substrate is placed within a reaction chamber (12) and a first gas is excited upstream of the substrate to generate activated radicals of the first gas. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. Rotation of the substrate draws the gas mixture down to the substrate surface in a laminar flow (29) to reduce recirculation and radical recombination. Another method utilizes a gas-dispersing showerhead (298) that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface.