SCHOTTKY BARRIER DIODE INCLUDING N REGION IN BACK BRANCH OF VOLTMETER CHARACTERISTIC

摘要

The invention is related to semiconductor electronics and can be used in electronic appliances, logic circuit boards and memory elements.The purpose of the invention is to simplify the Schottky barrier diode manufacturing technology.The diode consists of a semiconductor tray 1 which is covered with metal layers: ohmic contact 2 and barrier contact 3. There is at least one ohmic insertion 4 on one of the semi-conductive tray 1 surfaces. There is a hole (smaller than ohmic insertion 4) made in the metal layer of the barrier contact. The barrier contact 3 and the ohmic contact 2 are mounted on opposite sides or the same side of the semi-conductive tray 1.