Process for deposition of a tungsten layer on a semi-conductor wafer

摘要

A process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvement comprises forming an insulating layer on said wafer over an integrated circuit structure formed on said wafer, forming an intermediate layer of titanium nitride over said insulating layer, forming a cvd tungsten nucleation layer over said intermediate layer of titanium nitride, and depositing tungsten on said nucleation layer.