Process for producing an array of electrically driven quantum well components having a vertical structure

摘要

The method involves forming a lower bragg mirror (2) by epitaxial growth on a substrate (1). This is covered by an active layer formed of heterostructures with quantum wells in a base of III/V material (3). The active layer is encapsulated in a dielectric layer susceptible to induce an interdiffusion of alloy in the layer. This layer is then etched to form an self-alignment mask (4). The substrate covering the mask is then treated thermally to form modified regions (7) by interdiffusion of alloy. An upper mirror (8) is then formed by a further epitaxial growth, using a material of opposite doping to the lower mirror. Finally the edges of the mirrors in contact with the dielectric are metallised.