Process for deposition of a tungsten layer on a semiconductor wafer

摘要

A process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvement comprises forming an insulating layer on said wafer over an integrated circuit structure formed on said wafer; forming an intermediate layer over said insulating layer; and depositing tungsten over said intermediate layer while maintaining a pressure of at least about 2,67 kPa (about 20 Torr) in said deposition chamber.