发明名称 |
Positive-working naphthoquinone diazide sulfonic acid ester photoresist composition containing 4,4'-bis(dialkylamino)benzophenone |
摘要 |
Proposed is a novel positive-working photoresist composition suitable for use in the fine patterning works in the manufacture of electronic devices and capable of exhibiting excellent performance with high resolution, high sensitivity, wide range of focusing depth, large exposure dose latitude and other characteristics. The photoresist composition is formulated, in addition to the basic ingredients of an alkali-soluble novolac resin as a film-forming agent and photosensitive ingredient such as an ester of naphthoquinone-1,2-diazide sulfonic acid and a polyhydroxy compound, with a limited amount of 4,4'-bis(dialkylamino) benzophenone, e.g., 4,4'-bis(diethylamino) benzophenone, preferably, in combination with a polyhydroxy compound such as 4,6-bis[1-methyl-1-(4-hydroxyphenyl)ethyl]-1,3-dihydroxy phenol.
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申请公布号 |
US5478692(A) |
申请公布日期 |
1995.12.26 |
申请号 |
US19940350128 |
申请日期 |
1994.11.29 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
DOI, KOUSUKE;NAKAO, TAKU;NUMATA, REMI;TOKUTAKE, NOBUO;KOHARA, HIDEKATSU;NAKAYAMA, TOSHIMASA |
分类号 |
G03F7/004;G03F7/022;G03F7/031;H01L21/027;(IPC1-7):G03F7/023 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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