| 发明名称 |
CVD diamond growth on hydride-forming metal substrates |
| 摘要 |
A method for producing CVD diamond film on a substrate comprised of a hydride-forming metal. The substrate provides for easy release of the CVD diamond coating formed thereon upon exposure to a hydrogen pressure. Self-supporting CVD diamond films of large dimension are easily obtained without dissolving the substrate. The substrate can be used in conventional CVD reactors.
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| 申请公布号 |
US5478513(A) |
申请公布日期 |
1995.12.26 |
| 申请号 |
US19950415119 |
申请日期 |
1995.03.29 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
KOSKY, PHILIP G.;ANTHONY, THOMAS R. |
| 分类号 |
C01B6/00;C23C16/01;C23C16/26;C23C16/27;C30B25/02;C30B25/18;C30B29/04;H01L21/205;(IPC1-7):B29C35/00 |
主分类号 |
C01B6/00 |
| 代理机构 |
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代理人 |
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