发明名称 |
Semiconductor laser and method of manufacturing the same |
摘要 |
In a semiconductor laser having a p-type cladding layer consisting of GaInP or AlGaInP, an operating voltage is decreased. In a semiconductor laser formed on a GaAs substrate and having a p-type cladding layer consisting of GaInP or AlGaInP and a p-type contact layer consisting of GaAs or GalnAs, p-type buffer layers are formed between the p-type cladding layer and the p-type contact layer, which consists of a compound containing both arsenic (As) and phosphorus (P) and having a medium bandgap between those of the two layers.
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申请公布号 |
US5479427(A) |
申请公布日期 |
1995.12.26 |
申请号 |
US19940196434 |
申请日期 |
1994.02.15 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YOSHIDA, ICHIRO;KATSUYAMA, TSUKURU;HASHIMOTO, JUNICHI |
分类号 |
H01S5/00;H01L33/00;H01S5/223;H01S5/32;H01S5/343;(IPC1-7):H01S3/18 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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