Method of fabricating patterned-mirror VCSELs using selective growth

摘要

A method of fabricating VCSELs including the steps of epitaxially growing a first mirror stack of a first conductivity type, an active region on the first mirror stack, and a first portion of a second mirror stack of a second conductivity type on the active region. A dielectric layer is then formed on the first portion of the second mirror stack, patterned to define an operating region and a remaining portion of the second mirror stack is epitaxially grown on the first portion to form a complete second mirror stack. Portions of the second mirror stack overlying the dielectric layer are polycrystalline in formation and substantially limit the remaining portion of the second mirror stack to the operating region. The polycrystalline layers can then be removed and electrical contacts formed.