| 摘要 |
PURPOSE:To optically connect many light emitting and light receiving elements on the same plane with each other without alignment. CONSTITUTION:A lower DBR 5, a phase reversing layer 4, a middle DBR 3, a middle layer 2, which contains a combination active layer and absorbing layer 7 at the center, and an upper DBR (p-type: concentration of doping 3X10<18>cm<-3>) 1 are formed by molecular beam epitaxy method. After formation of the above multilayer film, a mesa is formed by etching off from the top to the severalth layer from above the middle DBR 3. An electrode 8 on p side is formed on the top of the mesa, and an n-type electrode 9 is made in common below the mesa. |
