| 摘要 |
<p>PURPOSE:To prevent hydrogen in an active layer from diffusing into a gate insulating film, by forming a thin film shown by a specific constitutional formula, between the active layer constituted of a silicon film and the gate insulating film formed on the active layer. CONSTITUTION:An active layer 103 composed of a crystalline silicon film is formed on a silicon nitride film 102 formed on a glass substrate 101, and then a thin film 104 shown by SiNxOy is formed. After a silicon oxide film 105 turning to a gate insulating film 105 is formed, a gate electrode 106 is formed. It is used as a mask, and ions are implanted. A source region 107 and a drain region 109 are formed in a self-alignment manner, and at the same time, a channel forming region 108 is formed. A source electrode 111 and a drain electrode 112 are formed and a thin film transistor is completed. Since the SiNxOy film 104 is present between the silicon oxide film 105 and the active layer 103, hydrogen does not diffuse into the gate insulating film 105, and characteristics are not deteriorated.</p> |
