| 摘要 |
<p>PURPOSE: To provide a wiring structure of a semiconductor device and formation thereof in which an aperture such as contact hole or via hole is buried, wherein a metal layer formed at the side wall of a smooth diffusion preventing film, namely, aluminum layer is vacuum deposited to a uniform and continuous film having good coating property to the leveled area of aluminum film, due to the excellent initial vacuum deposition characteristic of aluminum atoms. CONSTITUTION: A semiconductor substrate 31, an insulating layer 35 formed on the semiconductor substrate to include an aperture formed therein, a diffusion preventing film 37 having the smooth surface formed by plasma application to both side walls of the aperture, and a metal layer 41 formed on the diffusion preventing film are included.</p> |
